The CT851 series consists of a high power transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package different lead forming options.
Feature:
- High isolation 5000 VRMS
- CTR flexibility available see order information
- DC input with transistor output
- External Creepage ≥ 7.5mm (S/SL Type)
- External Creepage ≥ 8.0mm (SLM Type)
- Operating temperature range – 55 °C to 100 °C
- Regulatory Approvals
- UL – UL1577 (E364000)
- VDE – EN60747-5-5(VDE0884-5)
- CQC – GB4943.1, GB8898
- IEC60065, IEC60950
Application:
- Switch mode power supplies
- Computer peripheral interface
- Microprocessor system interface
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