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The CT851 series consists of a high power transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package different lead forming options. Feature: High isolation 5000 VRMS CTR flexibility available see order information DC input with transistor output External Creepage ≥ 7.5mm (S/SL Type) External Creepage ≥ 8.0mm (SLM Type) Operating...
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The PDP91608BT09 is a silicon photo diode housed in a miniature SMD package. The device comes with a superior filtering for visible light by utilizing special black molding compound. Feature: Small double-end package High sensitivity High reliability Spectral range of sensitivity: 700-1100nm Fast Response time RoHS compliance Application: Infrared sensor Download: PDF
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The PTP83012BT24 is silicon NPN Phototransistor housed in a miniature SMD package. The device comes with a superior filtering for visible light by utilizing special black molding compound. Feature: Small double-end package High photo sensitivity High reliability Spectral range of sensitivity: 760-1100nm Fast Response time RoHS compliance Application: Infrared sensor Infrared Touch Panel Solutions Download:...
