GaN High Frequency Devices

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  • .GHzGaNHEMTforMobileCommunicationBaseTransceiverStation(BTS)

    3.5GHz GaN HEMT for Mobile Communication Base Transceiver Station (BTS)

    Corresponding of various needs in a micro-cell BTS

    • Achieve high drain efficiency* of 67% by GaN-HEMT and transistor optimization
    • High efficiency allows use of simple cooling system, which contributes to smaller size and lower power consumption of BTS
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  • GaN HEMT MMIC for satellite communication SATCOM earth station

    GaN HEMT & MMIC for satellite communication (SATCOM) earth station

    Multi-carrier communications Ku-band GaN-HEMTs

    • Industry-leading* wide offset frequency up to 400MHz (MGFK48G3745A) for large-capacity satellite communications
    • Unrivaled output power up to 100W (MGFK50G3745A) will contribute to downsizing of SATCOM earth stations

    High power GaN-HEMT

    • 20W/70W/100W of output power products lineup available from driver stage to final stage amplifier application
    • Built-in linearizer (MGFG5H1503) enables low distortion in power transmitters
    • Addressing the need for more amplifiers configuration of satellite earth station by our variety products lineup, eliminates the need to evaluate the functionality of each transistor during product development, as well as connectivity and synthesis, shortening the development period
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