Ferroelectric RAM (FeRAM or FRAM) is a non-volatile, random-access memory featuring high read/write endurance, fast writing speed and ultra-low power operation. Fujitsu is one of the pioneers of this unique technology and has over 20 years of manufacturing experience.
Resistive RAM is also a non-volatile memory that relies on changes in resistance of the metal oxide thin film structure within each storage cell. The level of resistance determines the value of “1” or “0” in each cell. Main features of ReRAM memories are fast write times, low power consumption, and high endurance. Target applications include wearables, medical and industrial applications.
